The module introduces the physics of semiconductor devices through coverage of the following topics: atomic structure, bonding of Group III, IV and V elements, intrinsic and extrinsic semiconductors, pn junctions, diodes, BJTs and MOSFETs.
Atomic structure
Rutherford and Bohr atoms, quantum numbers, Periodic table of elements.
Covalent bonding and basic crystal structure
Crystal structure and Miller indices, Intrinsic and extrinsic semiconductor materials, energy levels and bands, electron distribution functions, carrier transport in semiconductors, the Hall effect
Diodes and Contacts
Ohmic contacts, Shottky contacts, p-n junctions: energy band diagrams, drift and diffusion currents, diode equation, junction capacitance, special purpose diodes
Bipolar Junction Transistors
Structure and current flow, BJT parameters, BJT characteristics, Ebbers-Moll model of BJTs
MOSFETs
Structure and operation of a basic MOSFET, drain-to source characteristics, derivation of threshold voltage, parasitic capacitance, introduction to CMOS technology
The module will be delivered through a series of lectures and lab sessions with student self-directed learning including assessment activities.
| Module Content & Assessment | |
|---|---|
| Assessment Breakdown | % |
| Formal Examination | 70 |
| Other Assessment(s) | 30 |